PART |
Description |
Maker |
STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
IRF7509PBF IRF7509TRPBF |
Ultra Low On-Resistance HEXFET?Power MOSFET HEXFET㈢Power MOSFET Generation V Technology
|
International Rectifier
|
STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
DMN3024LSD |
New Generation MOSFET
|
Diodes
|
SUN04A65IS |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
SUN12A65F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
BFC52 |
4TH GENERATION MOSFET
|
Seme LAB
|
SUN04A65F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
SUN12A60F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited Seme LAB
|